A 60-GHZ HIGH-EFFICIENCY MONOLITHIC POWER-AMPLIFIER USING 0.1-MU-M PHEMTS

We report the development of a V-band monolithic power amplifier based on 0.1 mu m gate-length pseudomorphic HEMT's. The two-stage amplifier has demonstrated record performance at 60 GHz on the first design pas s: 272 mW output power with 9.4 dB power gain; and 24% power-added eff iciency. The amplifier was designed for high-reliability communication s applications, with passivation, good linearity and excellent thermal properties, and has been fabricated on 3-in. wafers with high yield a nd excellent uniformity-on one typical wafer, consistency of MMIC outp ut power is better than +/-0.5 dB with an associated total yield throu gh RF test of 58%.