RETENTION AND THERMAL RELEASE OF OXYGEN-IMPLANTED IN BORON-CARBIDE

The retention characteristics of oxygen were investigated mainly using Rutherford backscattering spectroscopy (RBS) after implantation of 5 keV O-2(+) ions on boron carbide. The areal density of saturated reten tion was dependent on the boron concentration. Boron caused oxygen ret ention to increase. On the other hand, all the boron containing sample s, which included boron over 20 at%, had the same oxygen release chara cteristics: The implanted oxygen began to release above 600 degrees C and almost all the oxygen was desorbed by similar to 1000 degrees C. F or the boronized film which was made with the same method as that in J T-60U, the saturated retention was similar to 1 x 10(17) O/cm(2) and o xygen was released under the same temperature characteristics.