EVALUATION OF SILICON DOPED CFCS FOR PLASMA-FACING MATERIAL

Citation
Ch. Wu et al., EVALUATION OF SILICON DOPED CFCS FOR PLASMA-FACING MATERIAL, Journal of nuclear materials, 222, 1995, pp. 860-864
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Mining & Mineral Processing","Material Science
ISSN journal
00223115
Volume
222
Year of publication
1995
Pages
860 - 864
Database
ISI
SICI code
0022-3115(1995)222:<860:EOSDCF>2.0.ZU;2-V
Abstract
To improve the CFCs characteristics of chemical erosion, tritium reten tion, and H2O/air resistivity, silicon doped CFCs were developed in th e framework of European Fusion Technology programme. The tritium reten tion, H2O reaction kinetics, outgassing behaviour and depletion of sil icon in doped CFCs were investigated as a function of silicon concentr ation and temperature. The results show that silicon in bulk of CFCs d ecreases the tritium bulk retention and the H2O reactivity. However, i t has been observed that the concentration of silicon is slightly decr eased at elevated temperature. This paper presents the experimental re sults and the consequence is discussed.