NEW ROUTES TO METAL-ORGANIC PRECURSORS - GROWTH OF HIGH-PURITY ALGAASBY CBE USING A NOVEL AMINE ADDUCT OF TRIISOPROPYLGALLIUM

High-purity AlGaAs has been grown using chemical beam epitaxy employin g a new gallium precursor, triisopropylgallium . NEt(3) in combination with AlH3(NMe(2)Et). The materials exhibit low oxygen concentrations and excellent optical and electrical characteristics, comparable with the best materials grown using molecular beam epitaxy or metal-organic vapor phase epitaxy. The use of amine solvents and the complete absen ce of ethers from the precursors has important consequences for the gr owth of III-V alloys by CBE, as oxygen-containing solvents are known t o lead to materials degradation.