CURRENT-VOLTAGE CHARACTERISTICS SIMULATION OF SEMICONDUCTOR-DEVICES USING DOMAIN DECOMPOSITION

Authors
MICHELETTI S QUARTERONI A SACCO R
Citation
S. Micheletti et al., CURRENT-VOLTAGE CHARACTERISTICS SIMULATION OF SEMICONDUCTOR-DEVICES USING DOMAIN DECOMPOSITION, Journal of computational physics, 119(1), 1995, pp. 46-61
Citations number
21
Categorie Soggetti
Mathematical Method, Physical Science","Computer Science Interdisciplinary Applications","Physycs, Mathematical
Journal title
Journal of computational physics → ACNP
ISSN journal
00219991
Volume
119
Issue
1
Year of publication
1995
Pages
46 - 61
Database
ISI
SICI code
0021-9991(1995)119:1<46:CCSOSU>2.0.ZU;2-T
Abstract
We study the current-voltage characteristics of one-dimensional semico nductor devices by numerical approximation based on finite elements of the steady-state semiconductor device equations. A block nonlinear Ga uss-Seidel procedure is employed to decouple the full system, Then, at each iteration, a Neumann-Neumann domain decomposition method is appl ied to solve the linearized equations. Numerical examples will be give n, with special emphasis on charge generation effects due to impact io nization. (C) 1995 Academic Press, Inc.