HIGH-QUALITY ALN AND GAN EPILAYERS GROWN ON (00.1) SAPPHIRE, (100), AND (111) SILICON SUBSTRATES

Authors
KUNG P SAXLER A ZHANG X WALKER D WANG TC FERGUSON I RAZEGHI M
Citation
P. Kung et al., HIGH-QUALITY ALN AND GAN EPILAYERS GROWN ON (00.1) SAPPHIRE, (100), AND (111) SILICON SUBSTRATES, Applied physics letters, 66(22), 1995, pp. 2958-2960
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
22
Year of publication
1995
Pages
2958 - 2960
Database
ISI
SICI code
0003-6951(1995)66:22<2958:HAAGEG>2.0.ZU;2-I