ISLAND FORMATION DURING GROWTH OF GE ON SI(100) - A STUDY USING PHOTOLUMINESCENCE SPECTROSCOPY

Authors
SUNAMURA H USAMI N SHIRAKI Y FUKATSU S
Citation
H. Sunamura et al., ISLAND FORMATION DURING GROWTH OF GE ON SI(100) - A STUDY USING PHOTOLUMINESCENCE SPECTROSCOPY, Applied physics letters, 66(22), 1995, pp. 3024-3026
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
22
Year of publication
1995
Pages
3024 - 3026
Database
ISI
SICI code
0003-6951(1995)66:22<3024:IFDGOG>2.0.ZU;2-8