LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES

Authors
TRAUWAERT MA VANHELLEMONT J MAES HE VANBAVEL AM LANGOUCHE G CLAUWS P
Citation
Ma. Trauwaert et al., LOW-TEMPERATURE ANNEAL OF THE DIVACANCY IN P-TYPE SILICON - A TRANSFORMATION FROM V-2 TO VXOY COMPLEXES, Applied physics letters, 66(22), 1995, pp. 3057-3058
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
22
Year of publication
1995
Pages
3057 - 3058
Database
ISI
SICI code
0003-6951(1995)66:22<3057:LAOTDI>2.0.ZU;2-0