S. Vainshtein et al., INTERNAL Q-SWITCHING IN SEMICONDUCTOR-LASERS - HIGH-INTENSITY PULSES OF THE PICOSECOND RANGE AND THE SPECTRAL PECULIARITIES, IEEE journal of quantum electronics, 31(6), 1995, pp. 1015-1021
Optical pulses of similar to 100 ps duration, and similar to 10(2) W p
ower were obtained from the industrial single heterostructure lasers w
ith a standard pulse generation power of similar to 10 W in the intern
al Q-switching mode. Temporal and spectral analyses allow three compon
ents to be distinguished in the laser optical pulses: ordinary delayed
pulses of large duration at energies considerably lower than the ener
gy gap, short optical pulses caused by the gain-switching effect at hi
gher energies, and short optical pulses at the end of the current puls
e (Q-switching mode) at the highest energies. A model is proposed invo
lving band tail states as a saturable absorber causing large delays.