Jh. He et al., THE EFFECT OF ION-IMPLANTATION OF AR ON THE AQUEOUS CORROSION-RESISTANCE OF ZR-4 ALLOY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 100(1), 1995, pp. 59-64
The effect of ion implantation on the aqueous corrosion resistance of
Zr-4 in deaerated 1N H2SO4 was studied with the potentiokinetic techni
que. The Zr-4 alloy was bombarded with 5 X 10(14)-2 X 10(16) Ar/cm(2)
of 190 keV. It was found that the passive current density of Zr-4 decr
eases with increasing implantation dose. Photoelectrochemical results
show that the ion implantation of Ar in Zr-4 raises the flatband poten
tial of its passive film. AES was employed to analyze the surface of t
he passive film of Zr-4. The decrease in passive current density may b
e attributed to a thickening oxide layer on Zr-4 and a decrease in con
centration of oxygen vacancies in its passive film.