A NEW NONLINEAR DC MODEL FOR HBT AND MESFET POWER DEVICES

A new nonlinear empirical model that can be applied to the collector c urrent source of power HBT devices and to the drain current source of power MESFETs is presented. The model includes the self-heating effect s present in both HBT and MESFET devices. It also accurately predicts the slope variation of the dc-I-V characteristics from positive to neg ative, which occurs in MESFET devices. The proposed model is validated with the measured de and small-signal characteristics of one HBT and one MESFET medium-power device. Good agreement between measurement and simulation results was obtained for both devices. (C) 1995 John Wiley & Sons, Inc.