EPITAXIAL HIGH-T-C SUPERCONDUCTING THIN-FILMS ON SI WITH INTERMEDIATELAYERS

Epitaxial films of Y-Ba-Cu-O were prepared on Si(100) substrates, usin g epitaxial intermediate layers consisting of BaTiO3 (or SrTiO3)/MgAl2 O4. MgAl2O4 was epitaxially grown on the Si substrate by chemical vapo r deposition. Then, SrTiO3 or BaTiO3 was epitaxially grown on the MgAl 2O4 layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O fil ms were finally deposited on BaTiO3 (SrTiO3)/MgAl2O4/Si substrates by laser ablation and rf magnetron sputtering. The film prepared by laser ablation on BaTiO3/MgAl2O4/Si showed a zero resistance temperature of 86 K and a critical current density of 1.2 x 10(5) A/cm(2) at 73 K.