C-60 layers deposited on GaAs(110) and iron deposited on C-60 were stu
died by photoelectron spectroscopy using He-I and Al-K alpha radiation
. The spectra demonstrate no hybridisation between the electronic stat
es of GaAs(110) and C-60. Thus GaAs(110) is a suitable substrate to gr
ow smooth layers of C-60. Fe does not grow in layers on C-60, but inst
ead forms clusters. The spectra also show evidence for hybridisation b
etween the electronic levels of Fe and C-60.