GROWTH OF SRTIO3 THIN EPITAXIAL-FILMS BY AEROSOL MOCVD

Citation
K. Frohlich et al., GROWTH OF SRTIO3 THIN EPITAXIAL-FILMS BY AEROSOL MOCVD, Thin solid films, 260(2), 1995, pp. 187-191
Citations number
8
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
260
Issue
2
Year of publication
1995
Pages
187 - 191
Database
ISI
SICI code
0040-6090(1995)260:2<187:GOSTEB>2.0.ZU;2-P
Abstract
SrTiO3 thin films were prepared by aerosol metal-organic chemical vapo ur deposition on (001) MgO, R-plane Al2O3 and (001) Si single-crystal substrates. Strontium tetramethyl heptadionate and titanium n-butoxide dissolved in diethyleneglycol dimethyl ether were used as precursors. The structure of the films was investigated by X-ray diffraction and transmission electron microscopy. Epitaxial films with [001] and [111] orientation perpendicular to the substrate surface were obtained on M gO and Al2O3, respectively. The epitaxial films on the MgO substrate w ere found to be in a relaxed state with lattice parameters correspondi ng to the bulk values. SrTiO3 films on the Si substrate were grown as highly textured in the [011] direction and randomly oriented in the pl ane parrallel to the substrate surface.