PHYSICOCHEMICAL AND STRUCTURAL STUDY OF V ERY THIN SILICON-NITRIDE AND OXYNITRIDE FORMED BY RAPID THERMAL-TREATMENT

X-ray photoelectron spectroscopy, high resolution cross-sectional tran smission electron microscopy (METHR) and spectroscopic ellipsometry ha ve been used to investigate physico-chemical and structural properties of very thin silicon nitride and oxinitride layers. These layers have been formed by rapid thermal nitridation at 1000 degrees C of very th in silica films or silicon substrate in an ammonia atmosphere at atmos pheric pressure. In order to examine the influence of silicon substrat e surface on the chemical nature of the obtained oxinitride film, thre e types of samples have been analysed. In addition, the oxygen and nit rogen distribution profiles have been estimated using core level angul ar distributions and chemical thinning.