DETERMINATION OF LOW-ENERGY ION-IMPLANTATION DAMAGE PARAMETERS BY AN ELLIPSOMETRIC METHOD

Authors
MULLERJAHREIS U THIELE P BOUAFIA M SEGHIR A
Citation
U. Mullerjahreis et al., DETERMINATION OF LOW-ENERGY ION-IMPLANTATION DAMAGE PARAMETERS BY AN ELLIPSOMETRIC METHOD, Journal de physique. III, 5(5), 1995, pp. 575-584
Citations number
24
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
5
Issue
5
Year of publication
1995
Pages
575 - 584
Database
ISI
SICI code
1155-4320(1995)5:5<575:DOLIDP>2.0.ZU;2-S
Abstract
Low-energy ion implantations in semiconductor materials cause defects in near surface regions, which can sensitively be detected by ellipsom etry. By means of a simple analytic model, implantation parameters as ion damage straggling and amorphization threshold can be obtained by u sing only one-wavelength ellipsometry. This will be demonstrated for t he case of argon implantations (500 - 2500 eV) in silicon.