THE LUMPED-CHARGE POWER MOSFET MODEL, INCLUDING PARAMETER EXTRACTION

A fundamentally new, physically-based power MOSFET model features cont inuous and accurate curves for all three interelectrode capacitances, The model equations are derived from the charge stored on two internal nodes and the three external terminals, A straightforward parameter e xtraction technique uses the standard gate-charge plot or process data and is matched with interelectrode capacitance measurements. Simulati ons are in excellent agreement with measurements. The model is used to design a snubber for a flyback converter.