THE DUAL-GATE BASE RESISTANCE CONTROLLED THYRISTOR

A new device concept, called the dual gate base resistance controlled thyristor (DG-BRT), is introduced for simultaneously obtaining the low on-state voltage drop of a thyristor together with a good forward bia sed safe operating area. The two gates are used to control an N-channe l and a P-channel MOSFET integrated with a thyristor structure using t he DMOS process. When a positive bias is applied to both gates, the de vice operates in the thyristor-mode dth a low on-state voltage drop at even high current densities, When a negative bias is applied to the O FF-gate, the device operates in the IGBT-mode, with the saturated curr ent controlled by the positive bias applied to the ON-gate, The result s of two-dimensional numerical simulations and measurements performed on devices with 600 V forward blocking capability are reported.