ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITHTHIN ONO GATE-DIELECTRICS

Authors
YANG CK LEE CL LEI TF
Citation
Ck. Yang et al., ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITHTHIN ONO GATE-DIELECTRICS, IEEE electron device letters, 16(6), 1995, pp. 228-229
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
6
Year of publication
1995
Pages
228 - 229
Database
ISI
SICI code
0741-3106(1995)16:6<228:EHEOPT>2.0.ZU;2-8
Abstract
This letter reports that passivation effects of the H-2-plasma on the polysilicon thin-film transistors (TFT's) were greatly enhanced if the TFT's have a thin Si3N4 film On their gate-dielectrics. Compared to t he conventional devices with only the SiO2 gate dielectric, the TFT's with Si3N4 have much more improvement on their subthreshold swing and field-effect mobility after H-2-plasma treatment.