Ck. Yang et al., ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITHTHIN ONO GATE-DIELECTRICS, IEEE electron device letters, 16(6), 1995, pp. 228-229
This letter reports that passivation effects of the H-2-plasma on the
polysilicon thin-film transistors (TFT's) were greatly enhanced if the
TFT's have a thin Si3N4 film On their gate-dielectrics. Compared to t
he conventional devices with only the SiO2 gate dielectric, the TFT's
with Si3N4 have much more improvement on their subthreshold swing and
field-effect mobility after H-2-plasma treatment.