ELECTROMIGRATION CHARACTERISTICS OF TIN BARRIER LAYER MATERIAL

Authors
TAO J CHEUNG NW HU CM
Citation
J. Tao et al., ELECTROMIGRATION CHARACTERISTICS OF TIN BARRIER LAYER MATERIAL, IEEE electron device letters, 16(6), 1995, pp. 230-232
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
6
Year of publication
1995
Pages
230 - 232
Database
ISI
SICI code
0741-3106(1995)16:6<230:ECOTBL>2.0.ZU;2-4
Abstract
Electromigration reliability of TiN barrier layer itself has been stud ied, Our results show no electrically measurable electromigration, Res istance increase and open failure under high density current stress ar e apparently due to a purely thermally activated process with an activ ation energy of 1.5 eV, TiN resistance Is projected to be stable for 1 0 years if the temperature of the hottest spot in TiN is kept below 40 8 degrees C, which together with electrical sheet resistance and therm al resistance determine the acceptable current density in TiN.