NOVEL TUNNELING DIELECTRIC PREPARED BY OXIDATION OF ULTRATHIN RUGGED POLYSILICON FOR 5-V-ONLY NONVOLATILE MEMORIES

A novel dielectric fabricated dy thermal oxidation of ultrathin rugged polysilicon film is proposed for nonvolatile memories, Different roug hness degrees for the top and bottom interfaces of this dielectric ate detected by the atomic-force-microscopy (AFM) and high resolution tra nsmission electron microscopy (HRTEM), Due to the microtips formed at the bottom interface of the dielectric, significant improvements in th e high conduction efficiency, low trapping rate, good uniformity, and high reliability under positive gate-bias are obtained for the dielect ric. Therefore, rugged polyoxide is promising for future 5-V-only floa ting-gate applications.