PICOSECOND-SWITCHING TIME OF IN0.53GA0.47AS ALAS RESONANT-TUNNELING DIODES MEASURED BY ELECTROOPTIC SAMPLING TECHNIQUE/

Authors
SHIMIZU N NAGATSUMA T SHINAGAWA M WAHO T
Citation
N. Shimizu et al., PICOSECOND-SWITCHING TIME OF IN0.53GA0.47AS ALAS RESONANT-TUNNELING DIODES MEASURED BY ELECTROOPTIC SAMPLING TECHNIQUE/, IEEE electron device letters, 16(6), 1995, pp. 262-264
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
6
Year of publication
1995
Pages
262 - 264
Database
ISI
SICI code
0741-3106(1995)16:6<262:PTOIAR>2.0.ZU;2-L
Abstract
To demonstrate picosecond-switching time for In0.53Ga0.47As/AlAs reson ant-tunneling diodes (RTD's), we fabricated RTD's with various barrier widths and measured their switching times using electro-optic samplin g technique specially arranged for RTD's with high current density. Fo r an RTD having the barrier width of 1.4 nm with the peak current dens ity of 4.5 x 10(5) A/cm(2) and peak-to-valley ratio of 3.9, the switch ing time of 2.2 ps has been observed.