ANALYSIS OF KINK-RELATED BACKGATING EFFECT IN GAAS-MESFET

Authors
HORIO K USAMI K
Citation
K. Horio et K. Usami, ANALYSIS OF KINK-RELATED BACKGATING EFFECT IN GAAS-MESFET, IEEE electron device letters, 16(6), 1995, pp. 277-279
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
6
Year of publication
1995
Pages
277 - 279
Database
ISI
SICI code
0741-3106(1995)16:6<277:AOKBEI>2.0.ZU;2-H
Abstract
Two-dimensional simulation of backgating effect in a GaAs MESFET is ma de in which impact ionization of carriers and deep donors ''EL2'' in t he substrate are considered. The kink-related backgating is reproduced , which is qualitatively consistent with recent experiments. Based on the simulated results, physical mechanism of kink-related backgating e ffect is discussed.