DIRECT EVIDENCE FOR THE STEP DENSITY MODEL IN THE INITIAL-STAGES OF THE LAYER-BY-LAYER HOMOEPITAXIAL GROWTH OF GAAS(111)A

Authors
HOLMES DM SUDIJONO JL MCCONVILLE CF JONES TS JOYCE BA
Citation
Dm. Holmes et al., DIRECT EVIDENCE FOR THE STEP DENSITY MODEL IN THE INITIAL-STAGES OF THE LAYER-BY-LAYER HOMOEPITAXIAL GROWTH OF GAAS(111)A, Surface science, 370(1), 1997, pp. 173-178
Citations number
22
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
370
Issue
1
Year of publication
1997
Pages
173 - 178
Database
ISI
SICI code
0039-6028(1997)370:1<173:DEFTSD>2.0.ZU;2-U
Abstract
Scanning tunnelling microscopy (STM) has been used to investigate the morphological basis of the specular beam intensity oscillations observ ed in reflection high-energy electron diffraction (RHEED) studies duri ng the initial stages of GaAs(111)A homoepitaxy. Analysis of STM image s after the deposition of controlled amounts of GaAs up to a coverage of 2 monolayers show a strong relationship between the step density an d the RHEED specular beam intensity. It is shown that the RHEED oscill ations observed during the initial stages of growth reflect the tempor al variation in surface step density.