THE INFLUENCE OF MICROSTRUCTURE ON X-RAY-INDUCED DEGRADATION OF DARK CONDUCTIVITY OF A-SI-H LAYERS

X-ray-induced degradation of dark conductivity at 293 K characterized by the relation between the values before and after the exposure S was investigated in magnetron-sputtered a-Si:H layers. A variation in the incorporation of hydrogen in these layers described by the relation o f the integrals of the IR absorption peaks at 2000 cm-1 and 2090 cm-1 was carried out by a deposition of the layers at various substrate tem peratures and argon partial pressures. We found a direct correlation b etween the hydrogenated void fraction R and the degradation factor S a nd an influence of the initial dangling bond density measured with the constant-photocurrent method (CPM) on the degradation factor. Some me chanisms of defect generation are discussed as sources of the x-ray-in duced degradation behaviour of the dark conductivity.