Gs. Shekhawat et al., THE EFFECT OF SPUTTER-DEPOSITION CONDITIONS ON THE GROWTH-MECHANISM OF YBA2CU3O7-DELTA THIN-FILMS STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Superconductor science and technology, 8(5), 1995, pp. 291-295
Surface topography of as-grown films of YBa2Cu3O7-delta (YBCO) deposit
ed by off-axis RF magnetron sputtering on MgO and SrTiO3 single-crysta
l (100) substrates, has been investigated by scanning tunnelling micro
scopy (STM)/scanning tunnelling spectroscopy (STS) operated in air at
ambient temperature. Both c-axis- and a-axis-oriented YBCO films have
been investigated. In the case of c axis thin films, we have directly
observed spiral-shaped growth terraces, which emanate from screw dislo
cations of this layered superconducting oxide. The growth steps are ge
nerally seen to possess a step height close to or multiples of the uni
t cell height of the YBCO crystalline structure. In the case of a axis
growth, the substrate as well as the deposition temperature determine
s the grain orientation. Furthermore, our STS data revealed that the s
urface layer of the film is semiconducting and the tunnelling spectrum
varies its shape depending on the tip-to-sample distance. A supercond
ucting gap appears clearly in the spectra when the STM tip is placed c
loser to the surface than the normal position of the scanning mode. Th
is suggests that the semiconducting layer is confined in the topmost s
urface region of the as-prepared film, while the layer beneath it is s
uperconducting in character.