PHOTOIONIZATION OF ELECTRON TRAPS IN GA-DOPED CD1-XMNXTE

Authors
STANKIEWICZ J YARTSEV VM
Citation
J. Stankiewicz et Vm. Yartsev, PHOTOIONIZATION OF ELECTRON TRAPS IN GA-DOPED CD1-XMNXTE, Solid state communications, 95(2), 1995, pp. 75-78
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
95
Issue
2
Year of publication
1995
Pages
75 - 78
Database
ISI
SICI code
0038-1098(1995)95:2<75:POETIG>2.0.ZU;2-I
Abstract
Photoconductivity transients have been measured in Cd1-xMnxTe: Ga (x=0 .01) single crystals at low temperatures. The transients observed are strongly nonexponential. Their variations with photon flux and photon energy can be explained by a two-stage photoionization process of Ga-r elated defects. A model in which the defect traps two electrons in its ground state and one electron in the intermediate state accounts for most of the features of our data.