REFLECTIVITY END PHOTOLUMINESCENCE SPECTRA OF GAAS QUANTUM-WELLS IN AMAGNETIC-FIELD

Citation
V. Srinivas et al., REFLECTIVITY END PHOTOLUMINESCENCE SPECTRA OF GAAS QUANTUM-WELLS IN AMAGNETIC-FIELD, Solid state communications, 95(2), 1995, pp. 91-94
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
95
Issue
2
Year of publication
1995
Pages
91 - 94
Database
ISI
SICI code
0038-1098(1995)95:2<91:REPSOG>2.0.ZU;2-U
Abstract
We present photoluminescence and reflectance spectra of GaAs/Al-x Ga-1 -x As quantum wells in a magnetic field for the Faraday geometry. The photoluminescence peaks recorded are among the most intense and narrow reported to date. This has allowed us to study the behavior of closel y spaced bound exciton lines under a magnetic field. Several new featu res including magnetic field induced splitting of the bound exciton em ission peaks are reported.