INVESTIGATION ON RESIST DEVELOPMENT RATE MODEL FOR SYNCHROTRON-RADIATION X-RAY-LITHOGRAPHY

Since the synchrotron radiation X-ray lithography (SRXRL) was put forw ard, it has caught many people's attention day after day. It has much benefit, such as high-structural resolution, large process window, hig h throughput. It is generally thought a very good lithography techniqu e when dimensions shrink to 0.25 mu m and below([1]). Because of the i mportance of SRXRL in the future, in 1990 the lithographers in China e stablished the first SRXRL station in 3B1A beamline which is located i n Beijing Synchrotron Radiation Facility (BSRF), and they finished the first SRXRL experiment successfully in June, 1990. In the SRXRL exper iments, it is very important to select the product of exposure time an d exposure current accurately (thin product is expressed by XK below), because this selection will influence the resist development rate dir ectly, and thus can influence the quality of the image transferring la ter. In this note, we use the nonlinear regression analysis to establi sh several resist development rate models for SRXRL; all these models can pass hypothesis testing. Using these models to control XX in expos ures, good results can be obtained.