DEEP AND FAST PLASMA-ETCHING FOR SILICON MICROMACHINING

Authors
FRANCOU M DANEL JS PECCOUD L
Citation
M. Francou et al., DEEP AND FAST PLASMA-ETCHING FOR SILICON MICROMACHINING, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 17-21
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
46
Issue
1-3
Year of publication
1995
Pages
17 - 21
Database
ISI
SICI code
0924-4247(1995)46:1-3<17:DAFPFS>2.0.ZU;2-N
Abstract
A study of silicon anisotropic etching in SF6/Ar/O-2-based plasma has been performed in a surfatron reactor excited at 2.45 GHz with indepen dent radio-frequency biasing at 13.56 MHz. Emphasis is put on the comp arison of profiles and etch rates obtained with different percentages of oxygen added to the mixture as a function of substrate temperature. Good results are obtained with 15% O-2 and a substrate temperature of -30 degrees C, allowing a depth of 100 mu m to be etched.