ATOMIC-SCALE SIMULATION OF SILICON ETCHED IN AQUEOUS KOH SOLUTION

Authors
CAMON H MOKTADIR Z
Citation
H. Camon et Z. Moktadir, ATOMIC-SCALE SIMULATION OF SILICON ETCHED IN AQUEOUS KOH SOLUTION, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 27-29
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
46
Issue
1-3
Year of publication
1995
Pages
27 - 29
Database
ISI
SICI code
0924-4247(1995)46:1-3<27:ASOSEI>2.0.ZU;2-J
Abstract
In this paper we present the theoretical bases of an atomic scale mode l and the Monte Carlo implementation. We present results for [hk0] ori ented surfaces like etching rates, and more detailed results for low-i ndex surfaces such as [100] and [111]. For these two directions we wil l present results concerning the surface morphology and the time evolu tion of the roughness.