MAGNETORESISTIVE THICK-FILM SENSOR FOR LINEAR DISPLACEMENTS

Citation
B. Morten et al., MAGNETORESISTIVE THICK-FILM SENSOR FOR LINEAR DISPLACEMENTS, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 261-265
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09244247
Volume
46
Issue
1-3
Year of publication
1995
Pages
261 - 265
Database
ISI
SICI code
0924-4247(1995)46:1-3<261:MTSFLD>2.0.ZU;2-R
Abstract
A new thick film material has been developed starting from Ni and Co p owders in the ratio Ni:Co=3:1. The thermal treatment (in N,, up to 950 degrees C) of the metal films deposited on glazed alumina enables the in situ formation of the NiCo alloy. The films as created exhibit a h igh longitudinal (current I parallel to the field B) magnetoresistive response with Delta R/R approximate to 4% at 1.2 kGauss, and a negligi ble transverse one. The temperature coefficient of resistance (TCR) is approximate to 2700 ppm degrees C-1. These properties make the new ma terial superior, from the point of view of magnetoresistive applicatio ns, to the Ni-based currently available thick film conductors. Contact less sensors for linear displacements have been created with the senso r's structure enclosing either Ni-based and Ni/Co-based meanders, havi ng two magnetoresistive elements on each side of the substrate. This p aper compares the magnetoresistive and thermoresistive properties of N i and Ni/Co-based layers as well as the performances of the sensors in the range -20 to 120 degrees C.