K. Kaufmann et Lj. Balk, NUMERICAL-SIMULATION OF ELECTRON-BEAM-INDUCED GATE CURRENTS IN A GAAS-MESFET .1. THEORY AND MODEL, Journal of physics. D, Applied physics, 28(5), 1995, pp. 914-921
Electron-beam-induced current (EBIC) measurements can be used in order
to investigate microscopic electrical properties of semiconductor mat
erials and devices. However, for the estimation of material parameters
and the unequivocal interpretation of EBIC micrographs, very often ad
ditional simulations are necessary. Up to now, these simulations have
been carried out mostly using analytical models based on some restrict
ive simplifications. These models can only be used for simple specimen
structures of high symmetry or for specimens that can be definitely s
eparated into such simple structures. These models are not well suited
to the simulation of electron beam currents in small devices such as
MESFETs (metal-semiconductor field-effect transistors). Thus, we have
used the more adaptable finite difference method for two-dimensional n
umerical simulations of electron-beam-induced gate currents in these d
evices. In this first part of the paper, the model and tools used are
presented.