NUMERICAL-SIMULATION OF ELECTRON-BEAM-INDUCED GATE CURRENTS IN A GAAS-MESFET .1. THEORY AND MODEL

Citation
K. Kaufmann et Lj. Balk, NUMERICAL-SIMULATION OF ELECTRON-BEAM-INDUCED GATE CURRENTS IN A GAAS-MESFET .1. THEORY AND MODEL, Journal of physics. D, Applied physics, 28(5), 1995, pp. 914-921
Citations number
24
Categorie Soggetti
Physics, Applied
ISSN journal
00223727
Volume
28
Issue
5
Year of publication
1995
Pages
914 - 921
Database
ISI
SICI code
0022-3727(1995)28:5<914:NOEGCI>2.0.ZU;2-E
Abstract
Electron-beam-induced current (EBIC) measurements can be used in order to investigate microscopic electrical properties of semiconductor mat erials and devices. However, for the estimation of material parameters and the unequivocal interpretation of EBIC micrographs, very often ad ditional simulations are necessary. Up to now, these simulations have been carried out mostly using analytical models based on some restrict ive simplifications. These models can only be used for simple specimen structures of high symmetry or for specimens that can be definitely s eparated into such simple structures. These models are not well suited to the simulation of electron beam currents in small devices such as MESFETs (metal-semiconductor field-effect transistors). Thus, we have used the more adaptable finite difference method for two-dimensional n umerical simulations of electron-beam-induced gate currents in these d evices. In this first part of the paper, the model and tools used are presented.