FORMATION AND ANNEALING OUT OF RADIATION DEFECTS IN P-SI(P,PT)

Citation
Ms. Yunusov et al., FORMATION AND ANNEALING OUT OF RADIATION DEFECTS IN P-SI(P,PT), Semiconductors, 29(4), 1995, pp. 346-347
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
29
Issue
4
Year of publication
1995
Pages
346 - 347
Database
ISI
SICI code
1063-7826(1995)29:4<346:FAAOOR>2.0.ZU;2-H