INGAAS GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS ON (311)B GAAS SUBSTRATE/

Authors
KANEKO Y NAKAGAWA S TAKEUCHI T MARS DE YAMADA N MIKOSHIBA N
Citation
Y. Kaneko et al., INGAAS GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS ON (311)B GAAS SUBSTRATE/, Electronics Letters, 31(10), 1995, pp. 805-806
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
10
Year of publication
1995
Pages
805 - 806
Database
ISI
SICI code
0013-5194(1995)31:10<805:IGVSLO>2.0.ZU;2-N
Abstract
InGaAs/GaAs vertical cavity top-emitting dielectric-mirror surface-emi tting lasers have been fabricated on a (311)B GaAs substrate. The thre shold current was 25 mA at a lasing wavelength of 0.97 mu m under puls ed operation at room temperature. The output was linearly polarised in the [233] direction.