SEMICONDUCTOR STUDY IN THE FERMI-DIRAC ST ATISTIC - APPLICATION TO PASSIVE FILMS

Authors
Citation
Ne. Hakiki et Md. Belo, SEMICONDUCTOR STUDY IN THE FERMI-DIRAC ST ATISTIC - APPLICATION TO PASSIVE FILMS, Comptes rendus de l'Academie des sciences. Serie II. Mecanique, physique, chimie, astronomie, 320(9), 1995, pp. 463-469
Citations number
5
Categorie Soggetti
Multidisciplinary Sciences
ISSN journal
12518069
Volume
320
Issue
9
Year of publication
1995
Part
1
Pages
463 - 469
Database
ISI
SICI code
1251-8069(1995)320:9<463:SSITFS>2.0.ZU;2-9
Abstract
The carrier concentration and the capacitance-potential relation of se mi-conductors are determined in the Fermi-Dirac statistic. The mathema tical development presented in this work is based on the resolution of the Fermi-Dirac integral F-1/2. The theoretical analysis developed in this research leads to a Mott-Schottky relation which is applied to t he study of the iron passive films.