PHOTOEMISSION-STUDY OF CE NI(110) SYSTEM

We have studied the electronic structures of Ce/Ni(110) system by the 4d-4f resonant photoemission using synchrotron radiation and the Ce3d core level X-ray photoemission. The results are interpreted in conjunc tion with the inter-diffusion of Ce and Ni atoms through the interface . The annealing after the deposition of Ce causes active diffusion of Ce atoms into the Ni substrate and Ni atoms into the Ce layers and bri ngs about a well-ordered surface. Both the Ce3d core level and valence band spectra show remarkable changes depending on the degree of inter -diffusion between Ce and Ni at the interface. It is revealed that a c lose relation exists between the Ce concentration and strength of the 4f-conduction states hybridization in the surface layer. The importanc e of the Ce4f-Ni3d hybridization is emphasized.