ACCURACY OF MODELING NONEQUILIBRIUM ELECTRON-TRANSPORT IN SILICON USING HYDRODYNAMIC TRANSPORT-EQUATIONS

Accuracy of hydrodynamic transport equations using the energy-dependen t relaxation times has been studied for electron transport in Si <100> . The concept of the hydrokinetic transport model is used to describe non-equilibrium electron transport phenomena and to examine the validi ty for the assumption of energy-dependent relaxation times. It has bee n shown that under the influence of a drastic increase in field the re laxation times might also strongly depend on the average velocity near the peak of strong velocity overshoot. In addition, the velocity depe ndence is found to be more pronounced at lower temperatures in Si <100 >.