G. Khrenov et al., A NUMERICAL-MODEL OF HETEROJUNCTION BIPOLAR-TRANSISTOR HIGH-FREQUENCYPERFORMANCE FOR DEVICE DESIGN, Compel, 13(4), 1994, pp. 671-676
An efficient numerical model of heterojunction bipolar transistor high
frequency performance is proposed. The developed model is based on th
e ensemble Monte Carlo particle simulator. The validity and accuracy o
f the model are verified by comparing of the results of the model pred
iction with the experimental dates. The role of the thickness of the c
ollector junction on the transistor cut-off frequency is investigated
and it is found that transistor cut-off frequency as a function of the
collector thickness has a maximum.