A NUMERICAL-MODEL OF HETEROJUNCTION BIPOLAR-TRANSISTOR HIGH-FREQUENCYPERFORMANCE FOR DEVICE DESIGN

Citation
G. Khrenov et al., A NUMERICAL-MODEL OF HETEROJUNCTION BIPOLAR-TRANSISTOR HIGH-FREQUENCYPERFORMANCE FOR DEVICE DESIGN, Compel, 13(4), 1994, pp. 671-676
Citations number
5
Categorie Soggetti
Mathematical Method, Physical Science","Computer Science Interdisciplinary Applications",Mathematics,"Engineering, Eletrical & Electronic
Journal title
CompelACNP
ISSN journal
03321649
Volume
13
Issue
4
Year of publication
1994
Pages
671 - 676
Database
ISI
SICI code
0332-1649(1994)13:4<671:ANOHBH>2.0.ZU;2-A
Abstract
An efficient numerical model of heterojunction bipolar transistor high frequency performance is proposed. The developed model is based on th e ensemble Monte Carlo particle simulator. The validity and accuracy o f the model are verified by comparing of the results of the model pred iction with the experimental dates. The role of the thickness of the c ollector junction on the transistor cut-off frequency is investigated and it is found that transistor cut-off frequency as a function of the collector thickness has a maximum.