UNIFIED SIMULATION-MODEL FOR JUNCTION-CONTROLLED FIELD-EFFECT TRANSISTORS

An simple model for the simulation of the electrical behaviour of seve ral types of junction controlled field-effect transistors is proposed. It is based on the calculation of the carrier concentration in the ch annel by means of a self-consistent solution of Schrodinger and Poisso n's equation in the direction perpendicular to the current now. Based on the carrier concentration the de, the small-signal, and also the no ise properties of the devices may be simulated. The calculated charact eristics of a sub-quarter micron gate GaAs MESFET, a delta-doped GaAs FET and a Velocity Modulation Transistor will be presented and discuss ed.