PHOTOLUMINESCENCE OF SI NANOCRYSTALS CREATED BY HEAVY-ION IRRADIATIONOF AMORPHOUS SIO FILMS

Authors
RODITCHEV D LAVALLARD P GANDAIS M DOORYHEE E SLAOUI A PERRIERE J
Citation
D. Roditchev et al., PHOTOLUMINESCENCE OF SI NANOCRYSTALS CREATED BY HEAVY-ION IRRADIATIONOF AMORPHOUS SIO FILMS, JPN J A P 2, 34, 1994, pp. 34-36
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Year of publication
1994
Supplement
34-1
Pages
34 - 36
Database
ISI
SICI code
Abstract
In order to create Si nanocrystals we have irradiated amorphous films of SiO by high energy heavy ions. The electron microscope images clear ly show crystallites of 15-25 Angstrom size formed inside ion traces o f similar to 200 Angstrom diameter. The broad luminescence band observ ed in the visible is attributed to the radiative recombination of phot oexcited carriers confined in the Si crystallites. We are able to cont rol the density and the mean size of the nanocrystals by tuning the ir radiation parameters.