ELECTRIC-FIELD DEPENDENT REFRACTIVE-INDEX OF QUANTUM-WELL STRUCTURES - THEIR MEASUREMENT AND APPLICATIONS

Authors
LANGER DW MAEDA Y
Citation
Dw. Langer et Y. Maeda, ELECTRIC-FIELD DEPENDENT REFRACTIVE-INDEX OF QUANTUM-WELL STRUCTURES - THEIR MEASUREMENT AND APPLICATIONS, JPN J A P 2, 34, 1994, pp. 173-175
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Year of publication
1994
Supplement
34-1
Pages
173 - 175
Database
ISI
SICI code
Abstract
The strong variation of the refractive index (Delta n) of multiple qua ntum wells (MQW) with an externally applied electric field (Delta E) c an be exploited in a variety of device structures usable in integrated optoelectronic circuits. Design and fabricational tolerances determin e Delta n/Delta E as function of wavelength A method for the experimen tal control of this parameter and the application of MQW structures in held induced waveguides is provided.