ZNS-ZNSE-ZNS GAAS(100) SINGLE-QUANTUM-WELL STRUCTURES AND ZNS/ZNSE/GAAS(100) SUPERLATTICES GROWN BY PHOTO-ASSISTED VPE/

Authors
KOVALENKO AV TISHCHENKO VV
Citation
Av. Kovalenko et Vv. Tishchenko, ZNS-ZNSE-ZNS GAAS(100) SINGLE-QUANTUM-WELL STRUCTURES AND ZNS/ZNSE/GAAS(100) SUPERLATTICES GROWN BY PHOTO-ASSISTED VPE/, JPN J A P 2, 34, 1994, pp. 209-211
Citations number
3
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Year of publication
1994
Supplement
34-1
Pages
209 - 211
Database
ISI
SICI code
Abstract
It has been shown that photo-assisted VPE (radiation source He-Cd lase r hv=2.807eV, P=0.8mW/cm(2)) at low substrate temperatures (170-350 de grees C) and big temperature gradient (200-250 degrees C/cm) gives res ults in extremely pure layers II-VI materials such as ZnSe/(100). Usin g this technology the single quantum well (SQW) structures of ZnS-ZnSe -ZnS/GaAs(10)) type and ZnS/ZnSe/GaAs (100) superlattices (SL) have be en grown for the first time. Reflection and photoluminescence spectra of the obtained structures have been studied.