ELECTRONIC STATES IN GALLIUM-ARSENIDE QUANTUM-WELLS PROBED BY OPTICALLY PUMPED NMR

An optical pumping technique was used to enhance and localize nuclear magnetic resonance (NMR) signals from an n-doped GaAs/Al0.1Ga0.9As mul tiple quantum well structure, permitting direct radio-frequency measur ements of gallium-71 NMR spectra and nuclear spin-lattice relaxation r ates (1/T-1) as functions of temperature (1.6 K < T < 4.2 K) and the L andau level filling factor (0.66 < nu < 1.76). The measurements reveal effects of electron-electron interactions on the energy levels and sp in states of the two-dimensional electron system confined in the GaAs wells. Minima in 1/T-1 at nu approximate to 1 and nu approximate to 2/ 3 indicate energy gaps for electronic excitations in both integer and fractional quantum Hall states. Rapid, temperature-independent relaxat ion at intermediate v values indicates a manifold of low-lying electro nic states with mixed spin polarizations.