Y. Miura et al., DISLOCATION MULTIPLICATION SOURCES IN COPPER REVEALED BY X-RAY TOPOGRAPHY, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 71(6), 1995, pp. 1363-1373
The nature of grown-in dislocations and dislocation multiplication sou
rces in copper have been studied by X-ray topography. A number of grow
n-in dislocations in plates of copper single crystals, after a long-ti
me thermal cyclic annealing, are revealed to penetrate the large surfa
ces without any nodes. Those dislocations have Burgers vectors with a
strong edge component. Segments of grown-in dislocations act as surfac
e multiplication sources at shear stresses smaller than 100 kPa. The s
tress is in good agreement with that evaluated from the observed lengt
h of a single-ended multiplication source. A further increase in stres
s activates new sources and also cross-slip of screw dislocations onto
neighbouring slip planes. The crystal becomes covered with rows of mu
ltiplied dislocations before reaching its macroscopic yield. A series
of topographs, corresponding to the incrementally increasing stress, c
learly show the dislocation multiplication process in the copper cryst
als.