SURFACE DANGLING BOND STATE IN SI(111) AND EPITAXIAL BETA-FESI2 FILMS- A COMPARATIVE PHOTOELECTRON-SPECTROSCOPY STUDY

Authors
CHROST J HINAREJOS JJ MICHEL EG MIRANDA R
Citation
J. Chrost et al., SURFACE DANGLING BOND STATE IN SI(111) AND EPITAXIAL BETA-FESI2 FILMS- A COMPARATIVE PHOTOELECTRON-SPECTROSCOPY STUDY, Surface science, 330(1), 1995, pp. 34-40
Citations number
24
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
330
Issue
1
Year of publication
1995
Pages
34 - 40
Database
ISI
SICI code
0039-6028(1995)330:1<34:SDBSIS>2.0.ZU;2-P
Abstract
The surface of beta-FeSi2(101) grown on Si(111) contains surface state s, located at about 0.3 eV below the Fermi level, which are related to Si adatoms. These adatoms, which have been identified as atomic size protrusions in STM images, are arranged in different surface reconstru ctions. From hydrogenation experiments the average density of surface states has been determined. It turns out to be comparable to the densi ty of adatoms on Si(111)7 X 7. When the dangling bonds are saturated w ith hydrogen, the beta-FeSi2 surface is efficiently passivated against oxidation.