The morphology, composition and structure of wet chemically prepared 6
H-SiC(0001) samples were investigated immediately after introduction i
nto vacuum. Scanning tunneling microscopy displayed large atomically f
lat areas on the surface. The step structure found is correlated to th
e sample periodicity normal to the surface. Most step heights are mult
iples of half the vertical unit cell length. Low-energy electron diffr
action (LEED) revealed good surface order with bulk-like lateral perio
dicity. From high-resolution electron energy loss spectroscopy the sat
uration of dangling bonds with hydroxyl species could be determined. T
his termination is responsible for an electron beam sensitivity found
in LEED. Upon annealing the oxygen is removed and carbon-carbon bonds
develop on the surface as demonstrated by Auger electron spectroscopy.
This new structure is ordered in a (root 3 X root 3)R30 degrees perio
dicity.