R. Jin et al., PHYSICS OF SEMICONDUCTOR VERTICAL-CAVITY SURFACE-EMITTING LASERS, Journal of nonlinear optical physics and materials, 4(1), 1995, pp. 141-161
We describe recent progress in the physics of light-matter interaction
s in vertical-cavity surface-emitting-laser (VCSEL) structures. Enhanc
ed spontaneous emission indicates strong medium-cavity coupling. The l
inewidth broadening factor is more accurately determined in VCSELs, su
pporting many-body theory of semiconductor nonlinearities. Threshold b
ehavior of VCSELs and microlasers is investigated by photon-correlatio
n experiment and quantum laser theory with emphasis on the importance
of second-order coherence properties. External optical injection into
a VCSEL cavity leads to injection locking, instabilities, acceleration
of coherent energy transfer and sideband lasing, most of which are mo
deled successfully by recently-developed first-principles semiconducto
r laser theory.