We have used ellipsometry to measure the glass transition temperature
(T-g) of ultra-thin films of polystyrene (PS) (less than 20 nm thick)
obtained by spin-casting from solution onto silicon substrates. We fin
d that T-g in these ultra-thin films is depressed from the bulk value
in qualitative accord with our earlier results on thicker films of PS.
In films as thin as 8 nm, the depression from the bulk value of T-g i
s 35 K. We have also prepared ultra-thins by grafting PS-COOH on the n
ative oxide of Si and by spin-casting PS-COOH onto Si. Here we have be
en able to measure the T-g of 5-nm firms in which we find a T-g depres
sion of IO K. We tentatively ascribe the smaller value of T-g depressi
on for these grafted chains to the constraining effect of the anchor.