GLASS-TRANSITION BEHAVIOR IN ULTRA-THIN POLYSTYRENE FILMS

Citation
Jl. Keddie et Ral. Jones, GLASS-TRANSITION BEHAVIOR IN ULTRA-THIN POLYSTYRENE FILMS, Israel Journal of Chemistry, 35(1), 1995, pp. 21-26
Citations number
39
Categorie Soggetti
Chemistry
Journal title
ISSN journal
00212148
Volume
35
Issue
1
Year of publication
1995
Pages
21 - 26
Database
ISI
SICI code
0021-2148(1995)35:1<21:GBIUPF>2.0.ZU;2-K
Abstract
We have used ellipsometry to measure the glass transition temperature (T-g) of ultra-thin films of polystyrene (PS) (less than 20 nm thick) obtained by spin-casting from solution onto silicon substrates. We fin d that T-g in these ultra-thin films is depressed from the bulk value in qualitative accord with our earlier results on thicker films of PS. In films as thin as 8 nm, the depression from the bulk value of T-g i s 35 K. We have also prepared ultra-thins by grafting PS-COOH on the n ative oxide of Si and by spin-casting PS-COOH onto Si. Here we have be en able to measure the T-g of 5-nm firms in which we find a T-g depres sion of IO K. We tentatively ascribe the smaller value of T-g depressi on for these grafted chains to the constraining effect of the anchor.