An innovative fabrication process for forming I-D, nanoscale linewidth
grating and wire structures in (100) Si is reported. Scanning electro
n microscope and Raman scattering measurements demonstrate crystalline
structures with widths as small as similar to 1.5 nm. For structures
less than or similar to 10 nm, room temperature photoluminescence meas
urements (257 nm excitation) show spectral peaks similar to 380-500 nm
. In contrast to the Raman scattering results, which show a definite c
orrelation with structure widths, the PL spectra are relatively invari
ant as structure widths are reduced below 10 nm.